Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

ABSTRACT

A memory cell comprises a capacitor having a first conductive capacitor electrode having laterally-spaced walls that individually have a top surface. A second conductive capacitor electrode is laterally between the walls of the first capacitor electrode, and comprises a portion above the first capacitor electrode. Ferroelectric material is laterally between the walls of the first capacitor electrode and laterally between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the ferroelectric material. A parallel current leakage path is between an elevationally-inner surface of the portion of the second capacitor electrode that is above the first capacitor electrode and at least one of the individual top surfaces of the laterally-spaced walls of the first capacitor electrode. The parallel current leakage path is circuit-parallel the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path. Other aspects, including methods, are disclosed.

RELATED PATENT DATA

This patent resulted from a continuation application of U.S. patentapplication Ser. No. 16/527,301, filed Jul. 31, 2019, entitled “MethodsOf Forming A Capacitor Comprising Ferroelectric Material And IncludingCurrent Leakage Paths Having Different Total Resistances”, namingMuralikrishnan Balakrishnan, Beth R. Cook, and Durai Vishak NirmalRamaswamy as inventors, which was a divisional application of U.S.patent application Ser. No. 15/404,576, filed Jan. 12, 2017, entitled“Memory Cells Comprising Ferroelectric Material And Including CurrentLeakage Paths Having Different Total Resistances”, naming MuralikrishnanBalakrishnan, Beth R. Cook, and Durai Vishak Nirmal Ramaswamy asinventors, now U.S. Pat. No. 10,396,145, the disclosures of which areincorporated by reference.

TECHNICAL FIELD

Embodiments disclosed herein pertain to memory cells and to methods offorming a capacitor.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. Memory may be fabricated in one or more arraysof individual memory cells. Memory cells may be written to, or readfrom, using digit lines (which may also be referred to as bit lines,data lines, sense lines, select lines, or data/sense lines) and accesslines (which may also be referred to as word lines). The digit lines mayconductively interconnect memory cells along columns of the array, andthe access lines may conductively interconnect memory cells along rowsof the array. Each memory cell may be uniquely addressed through thecombination of a digit line and an access line.

Memory cells may be volatile or non-volatile. Non-volatile memory cellscan store data for extended periods of time including when the computeris turned off. Volatile memory dissipates and therefore requires beingrefreshed/rewritten, in many instances multiple times per second.Regardless, memory cells are configured to retain or store memory in atleast two different selectable states. In a binary system, the statesare considered as either a “0” or a “1”. In other systems, at least someindividual memory cells may be configured to store more than two levelsor states of information.

A capacitor is one type of electronic component that may be used in amemory cell. A capacitor has two electrical conductors separated byelectrically insulating material. Energy as an electric field may beelectrostatically stored within such material. One type of capacitor isa ferroelectric capacitor which has ferroelectric material as at leastpart of the insulating material. Ferroelectric materials arecharacterized by having two stable polarized states. Polarization stateof the ferroelectric material can be changed by application of suitableprogramming voltages, and remains after removal of the programmingvoltage (at least for a time). Each polarization state has a differentcharge-stored capacitance from the other, and which ideally can be usedto write (i.e., store) and read a memory state without reversing thepolarization state until such is desired to be reversed. Less desirable,in some memory having ferroelectric capacitors the act of reading thememory state can reverse the polarization. Accordingly, upon determiningthe polarization state, a re-write of the memory cell is conducted toput the memory cell into the pre-read state immediately after itsdetermination. Regardless, a memory cell incorporating a ferroelectriccapacitor ideally is non-volatile due to the bi-stable characteristicsof the ferroelectric material that forms a part of the capacitor.

One type of memory cell has a select device electrically coupled inseries with a ferroelectric capacitor. Current typically leaks throughthe select device to adjacent substrate material even when the selectdevice is idle (i.e., when inactive or “off”). This leads to voltagedrop at the adjacent electrode of the ferroelectric capacitor, thuscreating a voltage differential between the two capacitor electrodes.This results in an electric field being applied across the ferroelectricmaterial when the memory cell is idle. Even if small, such an electricfield may start to flip individual dipoles in the ferroelectric materialand continue until all are flipped, thus erasing a programmed state ofthe memory cell. This can occur over a small amount of time, therebydestroying or preventing non-volatility in the memory cell.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic-like diagrammatic view of a memory cell inaccordance with an embodiment of the invention.

FIG. 2 is a diagrammatic sectional view of a memory cell in accordancewith an embodiment of the invention.

FIG. 3 is an enlarged cross-sectional view taken through line 3-3 inFIG. 2.

FIG. 4 is an enlarged cross-sectional view taken through line 4-4 inFIG. 2.

FIG. 5 is an enlarged cross-sectional view taken within box 5 in FIG. 2.

FIG. 6 is a diagrammatic cross-sectional view of a memory cell inaccordance with an embodiment of the invention.

FIG. 7 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention.

FIG. 8 is a view of the FIG. 7 construction at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 8 construction at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view of the FIG. 9 construction at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a view of the FIG. 10 construction at a processing stepsubsequent to that shown by FIG. 10.

FIG. 12 is a view of the FIG. 11 construction at a processing stepsubsequent to that shown by FIG. 11.

FIG. 13 is a view of the FIG. 12 construction at a processing stepsubsequent to that shown by FIG. 12.

FIG. 14 is a view of the FIG. 13 construction at a processing stepsubsequent to that shown by FIG. 13.

FIG. 15 is a view of the FIG. 14 construction at a processing stepsubsequent to that shown by FIG. 14.

FIG. 16 is a view of the FIG. 15 construction at a processing stepsubsequent to that shown by FIG. 15.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

A memory cell 9 in accordance with an embodiment of the invention isshown and initially described with reference to a schematic-like FIG. 1.Integrated circuitry (not shown) having memory cell 9 would likely havethousands or millions of such memory cells fabricated relative to amemory array or sub-array, and are not particularly material to thedisclosure herein. Such arrays or sub-arrays would likely have aplurality of access lines and digit lines having individual memory cells9 there-between where such cross. Individual memory cells may beconsidered as comprising the portions of an individual access line and acrossing individual digit line.

Memory cell 9 comprises a select device 12 and a capacitor 14electrically coupled in series (i.e., circuit) with select device 12,for example by a conductive (i.e., electrically) path 16 as shown.Capacitor 14 in the depicted diagram may be considered as comprising twoconductive capacitor electrodes 18 and 20 having ferroelectric material19 there-between. Physically, path 16 may simply be a single electrodeshared by capacitor 14 and select device 12. Capacitor 14 comprises anintrinsic current (i.e., electrical) leakage path from one of capacitorelectrodes 18 or 20 to the other through ferroelectric material 19. Suchintrinsic path is diagrammatically shown as a dashed line in a path 22going around ferroelectric material 19 for clarity in FIG. 1. However inreality, path 22 would intrinsically/inherently be through ferroelectricmaterial 19 to and between each of capacitor electrodes 18 and 20.Intrinsic path 22 will have some comparatively rather high overall/totalresistance (i.e., electrical) which is diagrammatically indicated as aresistor 24 as device 14 in operation functions as a capacitor. Totalresistance of resistor 24 will depend upon composition of ferroelectricmaterial 19, thickness of ferroelectric material 19, and dipoleorientation within ferroelectric material 19. Resistor 24 may inherentlybe a non-linear/variable resistor whereby its resistance is voltagedependent.

Memory cell 9 comprises a parallel (i.e., circuit-parallel) currentleakage path 26 from one capacitor electrode 18 or 20 to the other. Inone embodiment, parallel path 26 has a dominant band gap of 0.4 eV to5.0 eV, and in one embodiment that is less than that of ferroelectricmaterial 19. Such may be greater than dominant band gap of ferroelectricmaterial 19 if parallel path 26 is sufficiently shorter in length thanpath 22. Regardless, in one embodiment parallel path 26 has some totalresistance (e.g., shown as a resistor 28) that is lower than the totalresistance of intrinsic path 22. By way of examples only, totalresistance through intrinsic leakage path 22 may be 1×10¹¹-1×10¹⁸ ohmsand total resistance through parallel leakage path 26 may be1×10⁷-1×10¹⁷ ohms. In one embodiment, the parallel current leakage pathis configured so that current there-through when the memory cell is idleis no more than one nanoampere.

Select device 12 may be any existing or yet-to-be-developed selectdevice, including multiple devices. Examples include diodes, fieldeffect transistors, and bipolar transistors. In operation, select device12 will exhibit current leakage when the memory cell is idle (i.e., whenthe integrated circuitry associated with memory cell 9 is operationally“on”, but no “read” or “write” operation of memory cell 9 is occurring).A select device current leakage path 30 exists, and is diagrammaticallyshown as a dashed line around select device 12, although such would beintrinsically/inherently through select device 12 or to underlyingsubstrate (e.g, held at ground or other potential). Leakage path 30 isshown as having some total resistance 32. In one embodiment, parallelpath 26 is configured so that current there-through when memory cell 9is idle is greater than or equal to current leakage through path 30 whenmemory cell 9 is idle. Such will be dependent upon the construction andmaterials of select device 12, capacitor 14, parallel path 26, and uponvoltages at various points within memory cell 9 in normal operation.Ideally and regardless, such enables voltage at electrodes 18 and 20 tobe equal or at least very close to one another (e.g., within 50millivolts) when idle whereby no or negligible electric field is createdwithin ferroelectric material 19 when memory cell 9 is idle. For exampleand further, any voltage differential across the capacitor when idleideally is such that any electric field in ferroelectric material 19 isat least 20 times lower than the intrinsic coercive field offerroelectric material 19. Such may preclude unintended dipole directionchange within ferroelectric material 19. Alternately as examples, suchmay at least reduce risk of or increase time until unintended dipoledirection change within ferroelectric material 19.

In one embodiment, resistor 28 in parallel path 26 is a non-linearresistor between capacitor electrodes 18 and 20 exhibiting overallhigher resistance at higher voltages (e.g., between 1 to 5 Volts) thanat lower voltages (e.g., less than 250 millivolts). Ideally, such anon-linear resistor is formed towards providing a greater magnitude ofreduction of current leakage in parallel path 26 during higher voltage“read” and “write” operations as compared to when idle at lower voltage.

An access line and a digit line (neither being shown) would likely beassociated with memory cell 9. For example, select device 12 may be asimple two terminal diode or other two terminal device. A crosspoint-like array construction may then be used whereby a conductive path11 as part of first capacitor electrode 18 connects with or is part ofan access or digit line (not shown) and a conductive path 13 as part ofselect device 12 connects with or is part of the other of an access ordigit line (not shown). As an alternate example, select device 12 may bea field effect transistor. Then, as an example, conductive path 11 maybe part of a capacitor cell electrode 18 that is common to multiplecapacitors 14 (not shown) within a memory array or sub-array, component16 may be one source/drain region of the transistor, and component 13may be the other. The gate (not shown) of the transistor may be aportion of an access line (not shown), and source/drain component 13 mayconnect with or be part of a sense line (not shown). Other architecturesand constructions could alternately of course be used.

FIGS. 2-5 diagrammatically show an example physical construction of aportion of a memory cell 9 comprising capacitor 14 and parallel currentleakage path 26 in accordance with an embodiment of the invention. Likenumerals from the above-described embodiments have been used whereappropriate, with some differences being indicated with differentnumerals. FIGS. 2-5 depict a portion of a fragment or construction 10comprising a base substrate 50 that may include any one or more ofconductive/conductor/conducting (i.e., electrically herein),semiconductive, or insulative/insulator/insulating (i.e., electricallyherein) materials. Various materials are shown above base substrate 50.Materials may be aside, elevationally inward, or elevationally outwardof the depicted FIGS. 2-5 materials. For example, other partially orwholly fabricated components of integrated circuitry may be providedsomewhere above, about, or within substrate 50 (e.g., memory cell 9including capacitor 14 being shown), and are not particularly germane tothe inventions disclosed herein. Select device 12 may be electricallycoupled to either one of capacitor electrodes 18 or 20, with such shownbeing schematically connected to electrode 18 through a conductor 56.Regardless, unless otherwise indicated, any of the materials, regions,and structures described herein may be homogenous or non-homogenous, andregardless may be continuous or discontinuous over any material whichsuch overlie. Further, unless otherwise stated, each material may beformed using any suitable existing or yet-to-be-developed technique,with atomic layer deposition, chemical vapor deposition, physical vapordeposition, epitaxial growth, diffusion doping, and ion implanting beingexamples.

An insulative-comprising material 52 is shown as being above basesubstrate 50. By way of example only, such is shown as comprisingmaterial 53 above base substrate 50, material 54 above material 53, andmaterial 55 above material 54. In this document, unless otherwiseindicated, “elevational(ly)”, “higher”, “upper”, “lower”, “top”, “atop”,“bottom”, “above, “below”, “under”, “beneath”, “up”, and “down” aregenerally with reference to the vertical direction. Further, “vertical”and “horizontal” as used herein are directions that are perpendicular orwithin 10 degrees of perpendicular relative one another independent oforientation of the substrate in three-dimensional space. “Horizontal”refers to a general direction (i.e., within 10 degrees) along a primarysubstrate surface and may be relative to which the substrate isprocessed during fabrication. Also, “extend(ing) elevationally” and“elevationally-extending” in this document encompasses a range fromvertical to no more than 45° from vertical. An example material 53 issilicon nitride above silicon dioxide. An example material 54 is dopedsilicon dioxide, and an example material 55 is silicon nitride. Examplethicknesses for materials 53, 54, and 55 are 250 to 500 Angstroms, 0.4micron to 1.0 micron, and 250 to 500 Angstroms, respectively.

In this document, “thickness” by itself (no preceding directionaladjective) is defined as the mean straight-line distance through a givenmaterial or region perpendicularly from a closest surface of animmediately adjacent material of different composition or of animmediately adjacent region. Additionally, the various materials orregions described herein may be of substantially constant thickness orof variable thicknesses. If of variable thickness, thickness refers toaverage thickness unless otherwise indicated, and such material orregion will have some minimum thickness and some maximum thickness dueto the thickness being variable. As used herein, “different composition”only requires those portions of two stated materials or regions that maybe directly against one another to be chemically and/or physicallydifferent, for example if such materials or regions are not homogenous.If the two stated materials or regions are not directly against oneanother, “different composition” only requires that those portions ofthe two stated materials or regions that are closest to one another bechemically and/or physically different if such materials or regions arenot homogenous. In this document, a material, region, or structure is“directly against” another when there is at least some physical touchingcontact of the stated materials, regions, or structures relative oneanother. In contrast, “over”, “on”, “adjacent”, “along”, and “against”not preceded by “directly” encompass “directly against” as well asconstruction where intervening material(s), region(s), or structure(s)result(s) in no physical touching contact of the stated materials,regions, or structures relative one another.

Example construction 10 comprises lower conductor 56 which, for example,may be a conductive line running into and out of the plane of the pageupon which FIG. 2 lies, for example an access line or a digit line, orbe electrically coupled (in one embodiment, directly electricallycoupled) to or part of a select device 12. In this document,regions/materials/components are “electrically coupled” relative oneanother if in normal operation electric current is capable ofcontinuously flowing from one to the other, and does so predominately bymovement of subatomic positive and/or negative charges when such aresufficiently generated. Another electronic component may be between andelectrically coupled to the regions/materials/components. In contrast,when regions/materials/components are referred to as being “directlyelectrically coupled”, no intervening electronic component (e.g., nodiode, transistor, resistor, transducer, switch, fuse, etc.) is betweenthe directly electrically coupled regions/materials/components. Exampleconductive materials for conductor 56, and for any conductive materialherein, include one or more of elemental metal, a mixture or alloy oftwo or more elemental metals, conductive metal compounds, andconductively doped semiconductive materials, with TiN being one specificexample for conductor 56.

Capacitor 14 comprises a first conductive capacitor electrode 18 that inone embodiment has laterally-spaced walls 58, 59 that individually havea top surface 60. In one embodiment, first capacitor electrode 18 has abottom 62 extending laterally to and between laterally-spaced walls 58,59. Alternately and by way of example only, first capacitor electrode 18may comprise an upwardly and downwardly-open (not shown) conductivematerial cylinder (e.g., little or no bottom 62 extending between walls58, 59). Capacitor 14 includes a second conductive capacitor electrode20 which in the depicted embodiment is laterally between walls 58, 59 offirst capacitor electrode 18. Second capacitor electrode 20 is shown ascomprising a conductive material 64 (e.g., TiN), a conductive material66 (e.g., W), and a conductive material 68 (e.g., TiN). For purposes ofthe continuing discussion, second capacitor electrode 20 may beconsidered as comprising a portion 70 that is above first capacitorelectrode 18. Portion 70 comprises an elevationally-inner surface 71that is above first capacitor electrode 18, and in one embodiment ofwhich is an elevationally-innermost surface of portion 70 that is abovefirst capacitor electrode 18. Example thicknesses forconstructions/materials 18, 64, 66, 68, and 70 are 30 to 50 Angstroms,30 to 50 Angstroms, 200 to 400 Angstroms, 300 to 500 Angstroms, and 500to 900 Angstroms.

Ferroelectric material 19 is laterally between walls 58, 59 of firstcapacitor electrode 18 and laterally-between second capacitor electrode20 and first capacitor electrode 18. Example ferroelectric materialsinclude ferroelectrics that have one or more of transition metal oxide,zirconium, zirconium oxide, niobium, niobium oxide, hafnium, hafniumoxide, lead zirconium titanate, and barium strontium titanate, and mayhave dopant therein which comprises one or more of silicon, aluminum,lanthanum, yttrium, erbium, calcium, magnesium, strontium, and arare-earth element. An example thickness for ferroelectric material 19is 15 to 200 Angstroms. As asserted above with respect to FIG. 1,capacitor 14 in FIGS. 2-5 comprises an intrinsic current leakage path 22from one of the first and second capacitor electrodes to the otherthrough the ferroelectric material.

Parallel path 26 is shown as being encompassed by or within a material34. Parallel path 26 is shown as extending between a) elevationallyinner surface 71 of portion 70 of second capacitor electrode 20 that isabove first capacitor electrode 18, and b) at least one of individualtop surfaces 60 (in one embodiment and as shown both top surfaces 60) oflaterally-spaced walls 58, 59 of first capacitor electrode 18. As shown,parallel current leakage path 26 is circuit-parallel intrinsic currentleakage path 22, and is of lower total resistance than the intrinsiccurrent leakage path. Example materials 34 includes one or more ofamorphous silicon, polycrystalline silicon, germanium, chalcogenide(e.g., metal dichalcogenides), silicon-rich silicon nitride,silicon-rich silicon oxide, and intrinsically dielectric materialsuitably doped with conductivity increasing dopants (e.g., SiO₂ and/orSi₃N₄ doped with one or more of Ti, Ta, Nb, Mo, Sr, Y, Cr, Hf, Zr, W,and lanthanide series ions). Material 34, and thereby parallel path 26,may predominantly (i.e., more than 50 atomic %) comprise suchmaterial(s). Any of these materials may be doped or undoped to providedesired total resistance for current leakage flow there-through whenmemory cell 9 is idle.

In one embodiment, material 34 is homogenous whereby parallel path 26between capacitor electrodes 18 and 20 is homogenous. In one embodiment,material 34 is non-homogenous whereby parallel path 26 between capacitorelectrodes 18 and 20 is non-homogenous. In an embodiment where material34 and thereby parallel path 26 are non-homogenous, parallel path 26 mayhave multiple band gaps due to different composition materials thereinhaving different band gaps. Yet, parallel path 26 may have a dominant(meaning controlling) band gap of 0.4 eV to 5.0 eV likely dependent onthe respective volumes of the individual different materials withinparallel path 26. Accordingly, and regardless, “dominant” is used andapplies herein regardless of homogeneity of the particularpath/material. In one embodiment, dominant band gap of ferroelectricmaterial 19 may be lower than that of parallel path 26. In oneembodiment, minimum length of parallel path 26 is made longer thanminimum thickness of ferroelectric material 19. As one example, such alength relationship may be used when density of states in the parallelpath is equal to or greater than that in the ferroelectric material whendominant band gaps of the ferroelectric material and parallel path areabout the same. As another example, such a length relationship may beused when density of states in the parallel path is equal to or greaterthan that in the ferroelectric material when dominant band gap of theferroelectric material is less than that of the parallel path.

In one embodiment and as shown in FIGS. 2-5, material 34 and therebyparallel path 26 are directly against ferroelectric material 19. FIG. 6depicts an alternate embodiment memory cell 9 a wherein parallel path 26is not directly against ferroelectric material 19. Like numerals fromthe above-described embodiments have been used where appropriate, withsome construction differences being indicated with the suffix “a” orwith different numerals. Capacitor 14 a is shown as comprising somematerial 35 (e.g., dielectric material such as silicon dioxide and/orsilicon nitride) spaced between materials 34 and 19 whereby parallelpath 26 is not directly against ferroelectric material 19. Any otherattribute(s) or aspect(s) as described herein and/or shown may be used.

In one embodiment, memory cell 9 comprises a select device, for examplea select device 12 schematically shown as electrically coupling (in oneembodiment directly electrically coupling) with first capacitorelectrode 18 through conductor 56 in FIG. 2. In one such embodiment, inoperation, the select device exhibits currents leakage when the memorycell is idle, with the parallel path being configured so that currentthere-through when the memory cell is idle is greater than or equal tosaid current leakage of the select device when the memory cell is idle.

In one embodiment, a memory cell comprises a capacitor comprising afirst conductive capacitor electrode (e.g., 18, and regardless ofwhether having laterally-spaced walls). The capacitor comprises a secondconductive capacitor electrode (e.g., 20) comprising a portion (e.g.,70) above first capacitor electrode 18. Ferroelectric material (e.g.,19) is between second capacitor electrode 20 and first capacitorelectrode 18. The capacitor comprises an intrinsic current leakage path(e.g., 22) from one of the first and second capacitor electrodes to theother through the ferroelectric material. A parallel current leakagepath (e.g., 26) is between the second capacitor electrode and the firstcapacitor electrode. The parallel current leakage path iscircuit-parallel the intrinsic path, is of lower total resistance thanthe intrinsic current leakage path, and comprises an annulus 90 (FIGS.4-6). In one embodiment, the first capacitor electrode 18 comprises anannulus 91 (FIGS. 3, 5, 6). In one such embodiment, the annulus of thefirst capacitor electrode is directly against material (e.g., 34) of theparallel current leakage path that is in the shape of the annulus of theparallel current leakage path. In such one embodiment, a longitudinalend 92 of annulus 91 of first capacitor electrode 18 and a longitudinalend 93 of annulus 90 of the material of the parallel current leakagepath are directly against one another (FIGS. 5 and 6). In oneembodiment, the ferroelectric material comprises an annulus 94 (FIGS.3-6) laterally inside the first electrode. Any other attribute(s) oraspect(s) as described herein and/or shown may be used.

In one embodiment, a memory cell comprises a capacitor comprising afirst conductive capacitor electrode (e.g., 18, and independent ofwhether having laterally-spaced walls). The capacitor comprises a secondconductive capacitor electrode (e.g., 20, and independent of whethercomprising a portion above the first capacitor electrode). Ferroelectricmaterial (e.g., 19) is between the second capacitor electrode and thefirst capacitor electrode. The capacitor comprises an intrinsic currentleakage path (e.g., 22) from one of the first and second capacitorelectrodes to the other through the ferroelectric material. Acircuit-parallel current leakage path (e.g., 26) is between the secondcapacitor electrode and the first capacitor electrode. Thecircuit-parallel current leakage path is circuit-parallel the intrinsiccurrent leakage path and of lower total resistance than the intrinsiccurrent leakage path. The circuit-parallel current leakage path isphysically-parallel and alongside the ferroelectric material from abottom surface 93 to a top surface 95 (FIGS. 5 and 6) of material (e.g.,34) of the current leakage path. In one embodiment, the circuit-parallelcurrent leakage path is directly against the ferroelectric material. Inone such embodiment, the circuit-parallel current leakage path isdirectly against the ferroelectric material from the bottom surface tothe top surface of the material of the current leakage path. Any otherattribute(s) or aspect(s) as described herein and/or shown may be used.

Embodiments of the invention encompass methods of forming a capacitorand as well memory cells as identified above independent of method ofmanufacture. Example such embodiments are described with reference toFIGS. 7-16. Like numerals from above-described embodiments have beenused for predecessor materials/constructions that result in a finishedconstruction as shown, for example, in FIGS. 2-5.

Referring to FIG. 7, a capacitor opening 15 has been formed ininsulative-comprising material 52. Capacitor opening 15 may be of anyone or more shapes in horizontal cross section, for example circular,ellipsoidal, 4-sided (e.g., square or rectangular), 6-sided, acombination of straight and curved sides, etc. Capacitor opening 15 isshown as having straight vertical sidewalls, although such may benon-vertical and/or not straight. An example maximum open dimension forcapacitor opening 15 is 300 to 600 Angstroms. Likely several capacitoropenings 15 would be formed for forming several capacitorssimultaneously. An example technique for forming capacitor opening 15includes photolithographic patterning and etch with or without pitchmultiplication.

Referring to FIG. 8, a conductive lining 18 has been formed in capacitoropening 15 to comprise a first conductive capacitor electrode of acapacitor being formed in capacitor opening 15. In one embodiment and asshown, material of conductive lining 18 extends outwardly of capacitoropening 15 and over an uppermost surface 17 of insulative-comprisingmaterial 52.

Referring to FIG. 9, and in one embodiment, capacitor opening 15 withconductive lining 18 therein has been plugged with photoresist 80.

Referring to FIG. 10, photoresist 80 and material of conductive lining18 that extend outwardly of capacitor opening 15 over uppermost surface17 have been removed back at least to uppermost surface 17.

Referring to FIG. 11, conductive lining 18 has been elevationallyrecessed in capacitor opening 15 relative to uppermost surface 17 ofinsulative-comprising material 52 thus, for example, completingfabrication of example first capacitor electrode 18. In one embodiment,first capacitor electrode 18 has laterally-opposing walls 58 and 59, andin one embodiment a bottom 62 extending laterally to and betweenlaterally-spaced walls 58 and 59. Such acts of removing can be conductedby any suitable isotropic and/or anisotropic etching chemistry thatetches material of lining/first capacitor electrode 18 selectivelyrelative to material 55. In this document, a selective etch or removalis an etch or removal where one material is removed relative to anotherstated material at a rate of at least 2.0:1. Photoresist 80 is shownremaining within capacitor opening 15 during such removal/recessing,with material 80 also being removed back as shown. FIG. 12 showssubsequent removal of all remaining photoresist 80 (not shown) fromcapacitor opening 15. Such provides but one example embodiment offorming conductive lining 18 within capacitor opening 15 to have anuppermost surface 60 therein that is below an uppermost surface 17 ofinsulative-comprising material 52 immediately laterally adjacentcapacitor opening 15. Alternate existing or yet-to-be-developedtechniques may be used.

Referring to FIG. 13, a current leakage lining 34 has been formed atoprecessed conductive lining 18 within capacitor opening 15. In oneembodiment and as shown, material of current leakage lining 34 extendsoutwardly of capacitor opening 15 and over uppermost surface 17 ofinsulative-comprising material 52. In one embodiment and as shown,current leakage lining 34 has been formed directly against conductivelining 18. In one embodiment, the forming of current leakage lining 34may be conducted by PVD (physical vapor deposition) that forms materialof current leakage lining 34 in an uppermost portion of capacitoropening 15 and not in a lowest portion of capacitor opening 15. Materialof current leakage lining 34 may bulge laterally (not shown) toward aradial center of capacitor opening 15 (sometimes commonly known as a“bread-loafing” effect) and is not shown for simplicity in the drawings.

Referring to FIG. 14, ferroelectric material 19 has been formed asideconductive lining 18 and current leakage lining 34 in capacitor opening15, and which will comprise capacitor insulator material of thecapacitor being formed. In one embodiment and as shown, ferroelectricmaterial 19 extends outwardly of capacitor opening 15 and over anuppermost surface 82 of material of current leakage lining 34 laterallyoutward of capacitor opening 15. In one embodiment and as shown,ferroelectric material 19 is formed directly against current leakagelining 34 in capacitor opening 15. Conductive material 64 has beenformed in capacitor opening 15 to comprise a second electrode ofcapacitor 14 being formed. In one embodiment and as shown, conductivematerial 64 extends outwardly of capacitor opening 15 over an uppermostsurface 84 of ferroelectric material 19 that extends outwardly ofcapacitor opening 15.

Referring to FIG. 15, material of current leakage lining 34,ferroelectric material 19, and conductive material 64 that are laterallyoutward of capacitor opening 15 have been removed back at least toelevationally outermost surface 17 of insulative-comprising material 52.

Referring to FIG. 16, conductive material 66 and 68 are shown as havingbeen subsequently deposited and patterned to produce the FIG. 16construction (the same as that depicted in FIG. 2, but for the selectdevice). Capacitor 14 comprises an intrinsic current leakage path (e.g.,22) from one of the first and second capacitor electrodes to the otherthrough the ferroelectric material. The current leakage lining forms aparallel current leakage path 26 (FIGS. 2, 3, 5, and 6) that iscircuit-parallel the intrinsic current leakage path and of lower totalresistance than the intrinsic current leakage path, as described above.Any aspect of the method may encompass any of the features describedabove with respect to a memory cell construction.

CONCLUSION

In some embodiments, a memory cell comprises a capacitor having a firstconductive capacitor electrode having laterally-spaced walls thatindividually have a top surface. A second conductive capacitor electrodeis laterally between the walls of the first capacitor electrode, andcomprises a portion above the first capacitor electrode. Ferroelectricmaterial is laterally between the walls of the first capacitor electrodeand laterally between the second capacitor electrode and the firstcapacitor electrode. The capacitor comprises an intrinsic currentleakage path from one of the first and second capacitor electrodes tothe other through the ferroelectric material. A parallel current leakagepath is between an elevationally-inner surface of the portion of thesecond capacitor electrode that is above the first capacitor electrodeand at least one of the individual top surfaces of the laterally-spacedwalls of the first capacitor electrode. The parallel current leakagepath is circuit-parallel the intrinsic current leakage path and of lowertotal resistance than the intrinsic current leakage path.

In some embodiments, a memory cell comprises a capacitor comprising afirst conductive capacitor electrode and a second conductive capacitorelectrode comprising a portion above the first capacitor electrode.Ferroelectric material is between the second capacitor electrode and thefirst capacitor electrode. The capacitor comprises an intrinsic currentleakage path from one of the first and second capacitor electrodes tothe other through the ferroelectric material. A parallel current leakagepath is between the second capacitor electrode and the first capacitorelectrode. The parallel current leakage path is circuit-parallel theintrinsic path, of lower total resistance than the intrinsic currentleakage path, and comprises an annulus.

In some embodiments, a memory cell comprises a capacitor having a firstconductive capacitor electrode and a second conductive capacitorelectrode. Ferroelectric material is between the second capacitorelectrode and the first capacitor electrode. The capacitor comprises anintrinsic current leakage path from one of the first and secondcapacitor electrodes to the other through the ferroelectric material. Acircuit-parallel current leakage path is between the second capacitorelectrode and the first capacitor electrode. The circuit-parallelcurrent leakage path is circuit-parallel the intrinsic current leakagepath and of lower total resistance than the intrinsic current leakagepath. The circuit-parallel current leakage path is physically-paralleland alongside the ferroelectric material from a bottom surface to a topsurface of material of the current leakage path.

In some embodiments, a method of forming a capacitor comprises forming aconductive lining in a capacitor opening in insulative-comprisingmaterial to comprise a first capacitor electrode of a capacitor beingformed in the capacitor opening. The conductive lining has an uppermostsurface within the capacitor opening that is below an uppermost surfaceof the insulative-comprising material immediately laterally adjacent thecapacitor opening. A current leakage lining is formed atop theconductive lining within the capacitor opening. Ferroelectric materialis formed aside the conductive lining and the current leakage lining inthe capacitor opening. The ferroelectric material comprises capacitorinsulator material of the capacitor. Conductive material is formed inthe capacitor opening to comprise a second capacitor electrode of thecapacitor. The capacitor comprises an intrinsic current leakage pathfrom one of the first and second capacitor electrodes to the otherthrough the ferroelectric material. The current leakage lining forms aparallel current leakage path that is circuit-parallel the intrinsiccurrent leakage path and of lower total resistance than the intrinsiccurrent leakage path.

In some embodiments, a method of forming a capacitor comprises forming aconductive lining in a capacitor opening in insulative-comprisingmaterial to comprise a first capacitor electrode of a capacitor beingformed in the capacitor opening. Material of the conductive liningextends outwardly of the capacitor opening and over an uppermost surfaceof the insulative-comprising material. The capacitor opening with theconductive lining therein is plugged with photoresist. The photoresistand the material of the conductive lining extending outwardly of thecapacitor opening over an uppermost surface of the insulative-comprisingmaterial are removed back at least to the uppermost surface of theinsulative-comprising material. The conductive lining in the capacitoropening is elevationally recessed relative to the uppermost surface ofthe insulative-comprising material. All remaining of the photoresist isremoved from the capacitor opening. After removing the photoresist, acurrent leakage lining is formed atop the recessed conductive liningwithin the capacitor opening. Material of the current leakage liningextends outwardly of the capacitor opening and over the uppermostsurface of the insulative-comprising material. Ferroelectric material isformed aside the conductive lining and the current leakage lining in thecapacitor opening. The ferroelectric material extends outwardly of thecapacitor opening and over an uppermost surface of the material of thecurrent leakage lining laterally outward of the capacitor opening. Theferroelectric material comprises capacitor insulator material of thecapacitor. Conductive material is formed in the capacitor opening andextends laterally outwardly of the capacitor opening over an uppermostsurface of the ferroelectric material laterally outward of the capacitoropening. The conductive material comprises a second capacitor electrodeof the capacitor. The material of the current leakage lining, theferroelectric material, and the conductive material that are laterallyoutward of the capacitor opening are removed back at least to theelevationally outermost surface of the insulative-comprising material.The capacitor comprises an intrinsic current leakage path from one ofthe first and second capacitor electrodes to the other through theferroelectric material. The current leakage lining forms a parallelcurrent leakage path that is circuit-parallel the intrinsic currentleakage path and of lower total resistance than the intrinsic currentleakage path.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

The invention claimed is:
 1. A memory cell, comprising: a capacitorcomprising: a first capacitor electrode; a second capacitor electrodecomprising a portion above the first capacitor electrode; ferroelectricmaterial aside the first capacitor electrode and the second capacitorelectrode; and current-leakage material aside the ferroelectric materialand extending between the first and second capacitor electrodes, thecurrent leakage material being directly against a top surface of thefirst capacitor electrode, the current leakage material being directlyagainst a bottom surface of the portion of the second capacitorelectrode that is above the first capacitor electrode.
 2. The memorycell of claim 1 wherein the first capacitor electrode comprises anannulus.
 3. The memory cell of claim 1 wherein the second capacitorelectrode comprises an annulus.
 4. The memory cell of claim 1 whereinthe ferroelectric material comprises an annulus.
 5. The memory cell ofclaim 1 wherein the first capacitor electrode comprises an annulus andthe second capacitor electrode comprises an annulus.
 6. The memory cellof claim 1 wherein the first capacitor electrode comprises an annulusand the ferroelectric material comprises an annulus.
 7. The memory cellof claim 1 wherein the second capacitor electrode comprises an annulusand the ferroelectric material comprises an annulus.
 8. The memory cellof claim 1 wherein the current-leakage material has a dominant band gapof 0.4 eV to 5.0 eV.
 9. The memory cell of claim 8 wherein thecurrent-leakage material has a dominant band gap that is less thandominant band gap of the ferroelectric material.
 10. The memory cell ofclaim 1 wherein, in operation, any voltage differential across thecapacitor when idle is such that any electric field in the ferroelectricmaterial is at least 20 times lower than the intrinsic coercive field ofthe ferroelectric material.
 11. The memory cell of claim 1 wherein thedominant band gap of the ferroelectric material is equal to or less thanthat of the current-leakage material.
 12. A memory cell, comprising: acapacitor comprising: a first capacitor electrode comprising an annulus;a second capacitor electrode comprising an annulus radially inside theannulus of the first capacitor electrode, the annulus of the secondcapacitor electrode being taller than the annulus of the first capacitorelectrode; ferroelectric material aside the first capacitor electrodeand the second capacitor electrode; and current-leakage material asidethe ferroelectric material, extending between the first and secondcapacitor electrodes, and being directly against each of the first andsecond capacitor electrodes.
 13. The memory cell of claim 12 wherein theferroelectric material comprises an annulus.
 14. The memory cell ofclaim 12 wherein the current-leakage material predominantly comprisesone or more of amorphous silicon, polycrystalline silicon, andgermanium.
 15. The memory cell of claim 12 wherein the current-leakagematerial predominantly comprises one or more chalcogenides.
 16. Thememory cell of claim 12 wherein the current-leakage materialpredominantly comprises one or more of silicon-rich silicon nitride,silicon-rich silicon oxide, and intrinsically dielectric material dopedwith conductivity increasing dopants.
 17. The memory cell of claim 12wherein the current-leakage material where between the first and secondcapacitor electrodes is homogenous.
 18. The memory cell of claim 12wherein the current-leakage material where between the first and secondcapacitor electrodes is non-homogenous.
 19. A memory cell, comprising: acapacitor comprising: a first capacitor electrode comprising an annulus;a second capacitor electrode comprising an annulus radially inside theannulus of the first capacitor electrode; ferroelectric materialcomprising an annulus radially between the annulus of the firstcapacitor electrode and the annulus of the second capacitor electrode;and current-leakage material comprising an annulus extending between thefirst and second capacitor electrodes, and being directly against eachof the first and second capacitor electrodes.
 20. The memory cell ofclaim 19 wherein the annulus of the current-leakage material is notdirectly against the annulus of the second capacitor electrode.
 21. Thememory cell of claim 19 wherein the annulus of the current-leakagematerial is directly against the annulus of the first capacitorelectrode.
 22. The memory cell of claim 21 wherein the annulus of thecurrent-leakage material is not directly against the annulus of thesecond capacitor electrode.
 23. The memory cell of claim 21 wherein theannulus of the current-leakage material is directly against a topsurface of the annulus of the first capacitor electrode.
 24. The memorycell of claim 19 wherein the current-leakage material where between thefirst and second capacitor electrodes is homogenous.
 25. The memory cellof claim 19 wherein the current-leakage material where between the firstand second capacitor electrodes is non-homogenous.
 26. The memory cellof claim 19 wherein the current-leakage material is directly against theferroelectric material.
 27. The memory cell of claim 19 wherein thecurrent-leakage material is not directly against the ferroelectricmaterial.
 28. The memory cell of claim 19 comprising a select deviceelectrically coupled in series with the capacitor.